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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ463A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ463A has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. Package Drawings (unit: mm) 0.3 +0.1 -0 2.0 0.2 0.65 0.65 2 2.1 0.1 1.25 0.1 * Can be driven by a 2.5 V power source. 0.3 * Low Gate Cut-off Voltage. Marking ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg -30 +20 +0.1 +0.4 Note 150 150 -55 to +150 V V A A mW C C 0.9 0.1 Equivalent Circuit Drain Electrode Connection 1. Source 2. Gate 3. Drain Internal Diode Note PW 10 s, Duty Cycle 1 % Gate Gate Protect Diode Source Marking : H21 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. D11198EJ1V0DS00 (1st edition) Date Published September 1996 P Printed in Japan 0 to 1.1 (c) 0.15+0.1 -0.05 0.3 +0.1 -0 FEATURES 1 3 1996 2SJ463A ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 -1.0 20 23 60 -1.4 MIN. TYP. MAX. -1 +10 -1.7 UNIT TEST CONDITIONS VDS = -30 V, VGS = 0 VGS = +20 V, VDS = 0 VDS = -3 V, ID = -10 A VDS = -3 V, ID = -10 mA VGS = -2.5 V, ID = -1 mA A A V mS RDS(on)2 11 23 VGS = -4 V, ID = -10 mA RDS(on)3 6 13 VGS = -10 V, ID = -10 mA Ciss Coss Crss td(on) tr td(off) tf 5 15 1.3 140 330 220 320 pF pF pF ns ns ns ns VDS = -3 V VGS = 0 f = 1 MHz VDD = -3 V, ID = -10 mA VGS(on) = -4 V, RG = 10 RL = 300 2 2SJ463A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 -100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE dT - Derating Factor - % ID - Drain Current - mA 80 -80 VGS = -10 V VGS = -6 V VGS = -4 V VGS = -3 V 60 -60 40 -40 20 -20 VGS = -2.5 V 0 0 30 60 90 120 TA - Ambient Temperature - C 150 0 0 -1 -2 -3 -4 VDS - Drain to Source Voltage - V -5 TRANSFER CHARACTERISTICS -100 IyfsI - Forward Transfer Admittance - mS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1000 VDS = -3 V VDS = -3 V -10 ID - Drain Current - mA TA = 125 C -1 TA = 75 C TA = 25 C -0.1 TA = -25 C 100 TA = -25 C TA = 25 C 10 TA = 75 C TA = 125 C 1 -0.1 -0.01 -0.001 0 -0.8 -1.6 -2.4 -3.2 -4.0 -1 -10 -100 -1000 VGS - Gate to Source Voltage - V ID - Drain Current - mA RDS(on) - Drain to Source On-State Resistance - RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = -2.5 V 50 40 30 20 TA = 25 C 10 0 -0.1 TA = -25 C TA = 125 C TA = 75 C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = -4 V 50 40 30 20 10 0 -0.1 TA = 25 C TA = -25 C -1 -10 -100 ID - Drain Current - mA -1000 TA = 125 C TA = 75 C -1 -10 -100 ID - Drain Current - mA -1000 3 2SJ463A RDS(on) - Drain to Source On-Stage Resistance - RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 50 40 30 20 10 0 -0.1 TA = 25 C TA = -25 C TA = 75 C TA = 125 C VGS = -10 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 60 50 ID = -1 mA 40 30 20 10 0 0 -2 -4 -6 -8 VGS - Gate to Source Voltage - V -10 ID = -10 mA ID = -100 mA -1 -10 -100 ID - Drain Current - mA -1000 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 Ciss,Coss,Crss - Capacitance - pF td(on),tr,td(off),tf - Switching Time - ns SWITCHING CHARACTERISTICS 1000 tr tf td(on) 100 td(off) VGS = 0 f = 1 MHz Coss 10 Ciss Crss 1 -1 -10 VDS - Drain to Source Voltage - V -100 10 -10 VDD = -3 V VGS(on) = -4 V Rin = 10 -100 ID - Drain Current - mA -1000 SOURCE TO DRAIN DIODE FORWARD VOLTAGE -1000 ID - Reverse Drain Current - mA -100 -10 -1 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VSD - Source to Drain Voltage - V 4 2SJ463A REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 C11531E C10535E MEI-1202 X10679E 5 2SJ463A [MEMO] 6 2SJ463A [MEMO] 7 2SJ463A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 |
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